Pallets
Designed for band HF amplification as pre driver stage and final amplifier for HF modulators, it includes only one device capable of 5W RF output. The RF module is designed in a very compact package, providing the smallest footprint possible to satisfy all typical need of a compact modulator or pre-driver application in a high power amplification chain.
Designed for band I amplification as pre driver stage and final amplifier in BI modulators, it includes only one device capable of 15W RF output. The RF module is designed in a very compact package, providing the smallest footprint possible to satisfy all typical need of a compact modulator or pre-driver application in a high power amplification chain.
Designed for band I amplification as final and driver stage, it includes only one device capable of 50W RF output. The RF module is provided of the simple processing to satisfy all typical controls necessary for driver application in the high power amplification chain, by processing and managing the signals of Power input , Power gain adjustment, Phase in/out adjustment, RF switch-off.
Designed for analog and digital TV transmitters and transposers this RF amplifier incorporates, simple design based on microstrip and stripline technology, PTFE PCB, planar balun and push-pull LDMOS to enhance ruggedness and reliability. Very low thermal resistance is obtained by means of a silver plated copper base-plate coupled with latest generation printed circuit board material and devices. The RF block amplifier (pallet) is easy replaceable without any soldering and alignment, it comprises circuits for stabilizing the operating point and current monitoring readout.
Designed for band II FM amplification as pre driver stage and final amplifier in FM modulators, it includes only one device capable of 25W RF output. The RF module is designed in a very compact package, providing the smallest footprint possible to satisfy all typical need of a compact modulator or pre-driver application in a high power amplification chain.
Designed for band II FM amplification as final and driver stage, it includes only one device capable of 100W RF output. The RF module is provided of the simple processing to satisfy all typical controls necessary for driver application in the high power amplification chain, by processing and managing the signals of Power input, Power gain adjustment, Phase in/out adjustment, RF switch-off.
The new RF Module PLT02-122SC is a state of the art RF Module designed as final stage for band II FM amplifiers and uses a single LDMOS of the last generation capable of 1200 W RF output. The module is realized with an ultra compact layout to maximize the number of pallets in high power amplifiers and include the bias circuits, matching networks and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows to obtain broadband high efficiency and extremely low harmonic emissions that are all at least 50 dB below the carrier.
Designed for band III amplification as pre driver stage and final amplifier in BIII modulators, it includes only one device capable of 15W RF output. The RF module is designed in a very compact package, providing the smallest footprint possible to satisfy all typical need of a compact modulator or pre-driver application in a high power amplification chain.
Designed for band III amplification as final and driver stage, it includes only one device capable of 50W RF output. The RF module is provided of the simple processing to satisfy all typical controls necessary for driver application in the high power amplification chain, by processing and managing the signals of Power input , Power gain adjustment, Phase in/out adjustment, RF switch-off.
Designed for analog and digital TV transmitters and transposers this RF amplifier incorporates, simple design based on microstrip and stripline technology, PTFE PCB, planar balun and push-pull LDMOS to enhance ruggedness and reliability. Very low thermal resistance is obtained by means of a silver plated copper base-plate coupled with latest generation printed circuit board material and devices. The RF block amplifier (pallet) is easy replaceable without any soldering and alignment, it comprises circuits for stabilising the operating point and current monitoring readout.
Designed for analog and digital TV transmitters and transposers this RF amplifier incorporates latest design based on microstrip and stripline technology, PTFE PCB, planar balun and the latest LDMOS device from NXP to obtain the higher ruggedness and reliability maintaining the compatibility with the previous generation of LDMOS devices. Very low thermal resistance is obtained by means of the silver plated copper baseplate with the same size of the printed circuit board. The RF block amplifier (pallet) is easy replaceable without any alignment, it comprises circuits for stabilising the operating point in the whole temperature range.
Designed for analog and digital TV transmitters and transposers this RF amplifier incorporates latest design based on microstrip and stripline technology, PTFE PCB, planar balun and the latest LDMOS device from NXP to obtain the higher ruggedness and reliability maintaining the compatibility with the previous generation of LDMOS devices. Very low thermal resistance is obtained by means of the silver plated copper baseplate with the same size of the printed circuit board. The RF block amplifier (pallet) is easy replaceable without any alignment, it comprises circuits for stabilising the operating point in the whole temperature range.
Designed for analog and digital TV transmitters and transposers this RF amplifier incorporates latest design based on microstrip and stripline technology, PTFE PCB, planar balun and the latest LDMOS device from NXP to obtain the higher ruggedness and reliability maintaining the compatibility with the previous generation of LDMOS devices. Very low thermal resistance is obtained by means of the silver plated copper base-plate with the same size of the printed circuit board. The RF block amplifier is easy replaceable without any alignment and it comprises circuits for stabilising the operating point in the whole temperature range and an integrated current and temperature sense circuitry with relevant connector ( 3V/30A , others on request ).
The amplifier is designed for the L band operating at frequencies within 1030 to 1090 MHz as pulsed power amplification process. This unit employs solid state LDMOS transistor technology in order to obtain reliability and high efficiency. Typical Pulsed Performance provides 1kW peak with a repetition period of 100μsec and Duty Cycle of 2% max.
The unit is the RF amplifier basic block (pallet) including two 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. The amplifier consists in two parallel stages coupled by means of the combining system fully integrated in the RF block, as well bias circuit. The block can operate both at 32Vdc or 36Vdc, and have an integrated attenuation circuit at adjust the power gain accordingly to the requested specs.
The 150W Carrier Power Amplifier it is a Class AB, Low Distortion, High Gain Linear amplifier module for the 100 ÷ 500MHz band. Superior performances are obtained using broadband matching techniques and the finest Gold LDMOS transistors available on the market today. Matched for 50 Ohms input and output, with Shutdown, Current Monitoring, and Temperature alarm the Broadband Amplifier it is suitable for AM communication application.
The PLT10-102S power amplifier operates at frequency of 310÷360MHz and it is rated for continuous duty at an RF output power of 1000 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1000 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.
The PLT11-122S power amplifier operates at frequency of 81,25 MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.
The PLT12-102S power amplifier operates at frequency of 162,50MHz and it is rated for continuous duty at an RF output power of 1000 Watts. It is mainly designed as final output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.
The PLT13-122S power amplifier operates at frequency of 41MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.
The PLT14-122S power amplifier operates at frequency of 27MHz and it is rated for continuous duty at an RF output power of 1200 Watts. It is mainly designed as final power stage and it uses a single last generation LDMOS device capable of 1200 W RF output. The module is realized with a very compact layout to maximize the number of pallet in high power amplifiers and include the bias circuits, matching network and circuits for stabilization of the operating point. The configuration of the amplifier is a “push-pull” stage coupled by means of the combining network fully integrated in the RF block. This design allows obtaining broadband high efficiency and extremely low harmonic emissions.